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| PD - 95187 IRG4PH40UPBF INSULATED GATE BIPOLAR TRANSISTOR Features * UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode * New IGBT design provides tighter parameter distribution and higher efficiency than previous generations * Optimized for power conversion; SMPS, UPS and welding * Industry standard TO-247AC package * Lead-Free C Ultra Fast Speed IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-channel Benefits * Higher switching frequency capability than competitive IGBTs * Highest efficiency available * Much lower conduction losses than MOSFETs * More efficient than short circuit rated IGBTs TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 1200 41 21 82 82 20 270 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.24 --- 6 (0.21) Max. 0.77 --- 40 --- Units C/W g (oz) www.irf.com 1 04/26/04 IRG4PH40UPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage T 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.43 -- V/C VGE = 0V, IC = 1.0mA -- 2.43 3.1 IC = 21A VGE = 15V Collector-to-Emitter Saturation Voltage -- 2.97 -- IC = 41A See Fig.2, 5 V -- 2.47 -- IC = 21A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 250A Forward Transconductance U 16 24 -- S VCE = 100V, IC = 21A -- -- 250 VGE = 0V, VCE = 1200V Zero Gate Voltage Collector Current -- -- 2.0 A VGE = 0V, VCE = 10V, TJ = 25C -- -- 5000 VGE = 0V, VCE = 1200V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 86 13 29 24 24 220 180 1.04 3.40 4.44 24 25 310 380 7.39 13 1800 120 18 Max. Units Conditions 130 IC = 21A 20 nC VCC = 400V See Fig. 8 44 VGE = 15V -- -- TJ = 25C ns 330 IC = 21A, VCC = 960V 270 VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ See Fig. 9, 10, 14 5.2 -- TJ = 150C, -- IC = 21A, VCC = 960V ns -- VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ See Fig. 11, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10, (See fig. 13a) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PH40UPBF 50 F o r b o th : T ria n g u la r w a ve : I 40 D uty c yc le: 50% T J = 125C T s ink = 90C G ate driv e as spec ified Load Current ( A ) P o w e r D is s ip a tio n = 3 5 W C la m p vo l ta g e : 8 0 % o f ra te d 30 S q u a re wave : 6 0 % o f ra te d vo l ta g e 20 I 10 Id e a l d io de s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) TJ = 150 o C 10 10 TJ = 150 o C TJ = 25 oC TJ = 25 o C V = 15V 20s PULSE WIDTH GE 1 10 1 1 V = 50V 5s PULSE WIDTH CC 5 6 7 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PH40UPBF 50 4.0 40 VCE , Collector-to-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE I C = 42 A Maximum DC Collector Current(A) 3.0 30 I C = 21 A I C =10.5 A 2.0 20 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TTJ Junction Temperature ( C )C) J , , Junction Temperature ( Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH40UPBF 4000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 3000 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 21A 16 Cies 2000 12 8 1000 C oes C res 4 0 1 10 100 0 VCE , Collector-to-Emitter Voltage (V) 0 20 40 60 80 100 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5.0 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 960V V GE = 15V TJ = 25 C 4.8 I C = 21A 100 RG = 10 Ohm VGE = 15V VCC = 960V IC = 42 A IC = 21 A IC = 10.5 A 10 4.6 4.4 1 4.2 4.0 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RGRGGate Resistance (Ohm) , , Gate Resistance ( ) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PH40UPBF 25.0 15.0 10.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 20.0 VGE = 10 Ohm = 150 C = 960V = 15V 1000 VGE = 20V T J = 125 oC 100 10 5.0 0.0 SAFE OPERATING AREA 0 10 20 30 40 50 1 1 10 100 1000 10000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PH40UPBF L 50V 1 00 0V VC * 0 - 960V D .U .T. RL = 960V 4 X I C@25C 480F 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 960V VC D .U .T. Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4PH40UPBF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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